UV Light-Induced Degradation of Industrial Silicon HJT Solar Cells: Degradation Mechanism and Recovery Strategies

Abstract: The demand for Silicon heterojunction solar cells (HJT) has significantly grown recently. These have gained recognition their remarkable performance, which can be attributed to the exceptional passivation properties of bilayers consisting intrinsic and doped hydrogenated amorphous silicon. This study investigates alternative recovery methods looks into deterioration caused by UV radiation in commercial HJT cells. carrier lifetimes samples were measured before after exposed ultraviolet radiation. findings revealed a decrease lifetime, iVoc, iFF, indicating creation defects bulk a-Si:H interface between c-Si a-Si:H. It was assessed how SiOx performed as layer. been discovered that passivate dangling bonds, increase lifetime reduce trap density. In addition, techniques like current injection, infrared, light soaking, annealing applied. soaking treatments able partially restore efficiency without combination temperature, while found more effective. Additionally, effects both short prolonged exposure are investigated. an extended period time could not fully regain displayed irreparable flaws. Overall, this demonstrates potential increasing Si illuminates processes underlying ultraviolet-induced deterioration. sheds on degradation mechanisms highlights enhancing